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Dwarkesh Podcast · Thursday, October 22, 2026

Intel Details Transition to High-NA EUV and Backside Power for 14A Process

Intel discussed its manufacturing strategy for the upcoming 14A process node, explaining that the use of backside power alleviates front-side pitch constraints and makes high-NA EUV lithography tools economically and practically viable. They contrasted this with competitors like TSMC, which rely on double-patterning EUV due to different architectural choices.

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The tape

1 quote
“We use backside power. That means that you actually alleviate some of the pitch requirements you have on the front side. And that allows you to print that directly with Hainé.”
Heard on Dwarkesh Podcast — “What will computer chips look like in 2045?”, published Thursday, October 22, 2026. Heardvine summarizes and quotes with attribution and timestamps, and links to the original everywhere.
Transcribed via deepinfra · $0.01
Intel Details Transition to High-NA EUV and Backside Power for 14A Process — Heardvine